On the Vertical Fin Field-Effect Transistor in Gallium Nitride: Experimental Realization and Evaluation of the Frequency Capability for High-Power, High-Frequency Applications

On the Vertical Fin Field-Effect Transistor in Gallium Nitride: Experimental Realization and Evaluation of the Frequency Capability for High-Power, High-Frequency Applications
num., mostly col. illus. and tab. DOWNLOAD COVER